SIS412DN-T1-GE3 – Vishay Siliconix
May 15, 2026
Looking for the SIS412DN-T1-GE3 by Vishay Siliconix? This n-channel 30 v 12a (tc) 3.2w (ta), 15.6w (tc) surface mount powerpak® 1212-8 is currently available. ICCorders offers competitive pricing with verified, tested components and payment terms.
The SIS412DN-T1-GE3 is classified under Transistors in the Discrete Semiconductor Products category, part of the TrenchFET® series.
SIS412DN-T1-GE3 Specifications
| Parameter |
Value |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30 V |
| Current – Continuous Drain (Id) @ 25°C |
12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
24mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
435 pF @ 15 V |
| Power Dissipation (Max) |
3.2W (Ta), 15.6W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® 1212-8 |
| Package / Case |
PowerPAK® 1212-8 |
Availability & Supply Status
- Status: In Stock
- Lifecycle: Active
- Distribution Stock: 51,410 units
- Standard Lead Time: 17 weeks
Datasheet
Download the official SIS412DN-T1-GE3 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source SIS412DN-T1-GE3 from ICCorders?
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SIR404DP-T1-GE3 – Vishay Siliconix
May 9, 2026
Looking for the SIR404DP-T1-GE3 by Vishay Siliconix? This n-channel 20 v 60a (tc) 6.25w (ta), 104w (tc) surface mount powerpak® so-8 is showing supply chain risk indicators that may affect availability. ICCorders can help secure stock before it becomes unavailable.
The SIR404DP-T1-GE3 is classified under Transistors in the Discrete Semiconductor Products category, part of the TrenchFET® series.
SIR404DP-T1-GE3 Specifications
| Parameter |
Value |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current – Continuous Drain (Id) @ 25°C |
60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 10V |
| Rds On (Max) @ Id, Vgs |
1.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
97 nC @ 4.5 V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
8130 pF @ 10 V |
| Power Dissipation (Max) |
6.25W (Ta), 104W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® SO-8 |
| Package / Case |
PowerPAK® SO-8 |
Availability & Supply Status
- Status: Long Lead (38wk) – We May Beat This
- Lifecycle: Active
- Distribution Stock: 9,811 units
- Standard Lead Time: 38 weeks
Datasheet
Download the official SIR404DP-T1-GE3 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source SIR404DP-T1-GE3 from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
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- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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IRFP264NPBF – Vishay Siliconix
April 26, 2026
Looking for the IRFP264NPBF by Vishay Siliconix? This n-channel 250 v 44a (tc) 380w (tc) through hole to-247ac is increasingly difficult to source through standard distribution channels. ICCorders specialises in sourcing hard-to-find and obsolete ICs with full traceability and testing.
The IRFP264NPBF is classified under Transistors in the Discrete Semiconductor Products category.
IRFP264NPBF Specifications
| Parameter |
Value |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
250 V |
| Current – Continuous Drain (Id) @ 25°C |
44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
60mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
210 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
3860 pF @ 25 V |
| Power Dissipation (Max) |
380W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247AC |
| Package / Case |
TO-247-3 |
Availability & Supply Status
- Status: Obsolete – We Can Source
- Lifecycle: Obsolete
- Distribution Stock: Not available through standard distribution
- Last Time Buy Date: 25 September 2009
Datasheet
Download the official IRFP264NPBF datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source IRFP264NPBF from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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SI4532ADY-T1-GE3 – Vishay Siliconix
April 18, 2026
Looking for the SI4532ADY-T1-GE3 by Vishay Siliconix? This mosfet array 30v 3.7a, 3a 1.13w, 1.2w surface mount 8-soic is increasingly difficult to source through standard distribution channels. ICCorders specialises in sourcing hard-to-find and obsolete ICs with full traceability and testing.
The SI4532ADY-T1-GE3 is classified under Transistors in the Discrete Semiconductor Products category, part of the TrenchFET® series.
SI4532ADY-T1-GE3 Specifications
| Parameter |
Value |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
N and P-Channel |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
30V |
| Current – Continuous Drain (Id) @ 25°C |
3.7A, 3A |
| Rds On (Max) @ Id, Vgs |
53mOhm @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Power – Max |
1.13W, 1.2W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SOIC |
Availability & Supply Status
- Status: Obsolete – We Can Source
- Lifecycle: Obsolete
- Distribution Stock: Not available through standard distribution
- Standard Lead Time: 15 weeks
- Last Time Buy Date: 15 March 2018
Datasheet
Download the official SI4532ADY-T1-GE3 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source SI4532ADY-T1-GE3 from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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Need the SI4532ADY-T1-GE3? Request a quote today or use our BOM Risk Analysis Tool to check your full bill of materials.
IRFP460PBF – Vishay Siliconix
April 13, 2026
Looking for the IRFP460PBF by Vishay Siliconix? This n-channel 500 v 20a (tc) 280w (tc) through hole to-247ac is currently available. ICCorders offers competitive pricing with verified, tested components and payment terms.
The IRFP460PBF is classified under Transistors in the Discrete Semiconductor Products category.
IRFP460PBF Specifications
| Parameter |
Value |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
500 V |
| Current – Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
210 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
4200 pF @ 25 V |
| Power Dissipation (Max) |
280W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247AC |
| Package / Case |
TO-247-3 |
Availability & Supply Status
- Status: In Stock
- Lifecycle: Active
- Distribution Stock: 12,749 units
- Standard Lead Time: 15 weeks
Datasheet
Download the official IRFP460PBF datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source IRFP460PBF from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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IRF840 – Vishay Siliconix
April 11, 2026
Looking for the IRF840 by Vishay Siliconix? This n-channel 500 v 8a (tc) 125w (tc) through hole to-220ab is increasingly difficult to source through standard distribution channels. ICCorders specialises in sourcing hard-to-find and obsolete ICs with full traceability and testing.
The IRF840 is classified under Transistors in the Discrete Semiconductor Products category.
IRF840 Specifications
| Parameter |
Value |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
500 V |
| Current – Continuous Drain (Id) @ 25°C |
8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
850mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
63 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
1300 pF @ 25 V |
| Power Dissipation (Max) |
125W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220AB |
| Package / Case |
TO-220-3 |
Availability & Supply Status
- Status: Obsolete – We Can Source
- Lifecycle: Obsolete
- Distribution Stock: Not available through standard distribution
- Standard Lead Time: 12 weeks
- Last Time Buy Date: 20 November 2015
Datasheet
Download the official IRF840 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source IRF840 from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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SI3443CDV-T1-GE3 – Vishay Siliconix
April 7, 2026
Looking for the SI3443CDV-T1-GE3 by Vishay Siliconix? This p-channel 20 v 5.97a (tc) 2w (ta), 3.2w (tc) surface mount 6-tsop is showing supply chain risk indicators that may affect availability. ICCorders can help secure stock before it becomes unavailable.
The SI3443CDV-T1-GE3 is classified under Transistors in the Discrete Semiconductor Products category, part of the TrenchFET® series.
SI3443CDV-T1-GE3 Specifications
| Parameter |
Value |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current – Continuous Drain (Id) @ 25°C |
5.97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs |
60mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
12.4 nC @ 5 V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
610 pF @ 10 V |
| Power Dissipation (Max) |
2W (Ta), 3.2W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-TSOP |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Availability & Supply Status
- Status: Long Lead (49wk) – We May Beat This
- Lifecycle: Active
- Distribution Stock: 15,039 units
- Standard Lead Time: 49 weeks
Datasheet
Download the official SI3443CDV-T1-GE3 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source SI3443CDV-T1-GE3 from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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Need the SI3443CDV-T1-GE3? Request a quote today or use our BOM Risk Analysis Tool to check your full bill of materials.
SI3483CDV-T1-GE3 – Vishay Siliconix
April 5, 2026
Looking for the SI3483CDV-T1-GE3 by Vishay Siliconix? This p-channel 30 v 8a (tc) 2w (ta), 4.2w (tc) surface mount 6-tsop is currently available. ICCorders offers competitive pricing with verified, tested components and payment terms.
The SI3483CDV-T1-GE3 is classified under Transistors in the Discrete Semiconductor Products category, part of the TrenchFET® series.
SI3483CDV-T1-GE3 Specifications
| Parameter |
Value |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30 V |
| Current – Continuous Drain (Id) @ 25°C |
8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
34mOhm @ 6.1A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
33 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
1000 pF @ 15 V |
| Power Dissipation (Max) |
2W (Ta), 4.2W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-TSOP |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Availability & Supply Status
- Status: In Stock
- Lifecycle: Active
- Distribution Stock: 76,287 units
- Standard Lead Time: 17 weeks
Datasheet
Download the official SI3483CDV-T1-GE3 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.
Why Source SI3483CDV-T1-GE3 from ICCorders?
- Verified & Tested: Every component undergoes rigorous testing. No counterfeits, guaranteed.
- Full Traceability: Complete documentation and chain of custody for every part.
- Global Sourcing Network: Access to stock that standard distributors cannot reach.
- Payment Terms Available: Credit terms for qualified buyers. You don’t pay until you’re satisfied.
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